دیتاشیت STP45NF06
مشخصات دیتاشیت
| نام دیتاشیت |
STP45NF06
|
| حجم فایل |
703.734
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
13
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STP45NF06
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Power Dissipation (Pd):
80W
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Total Gate Charge (Qg@Vgs):
58nC@10V
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Input Capacitance (Ciss@Vds):
980pF@25V
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Continuous Drain Current (Id):
38A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
28mΩ@19A,10V
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Package:
TO-220
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Manufacturer:
STMicroelectronics
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Series:
STripFET™ II
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
38A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
28mOhm @ 19A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
58nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
980pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
80W (Tc)
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Operating Temperature:
175°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220AB
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Package / Case:
TO-220-3
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Base Part Number:
STP45N
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detail:
N-Channel 60V 38A (Tc) 80W (Tc) Through Hole TO-220AB
